Product Description

The Surfscan® SP3 unpatterned wafer surface inspection tool utilizes deep ultra-violet (DUV) sensitivity and a throughput up to three times that of its predecessor to reliably detect critical defects and surface quality issues for IC and substrate manufacturing at the 2Xnm design node. The Surfscan SP3 unpatterned wafer surface inspection system can provide higher sensitivity on bare wafers and blanket films than that of the previous-generation Surfscan SP2/SP2^XP. Alternatively, this unpatterned wafer surface inspection system can operate at a sensitivity similar to that of the Surfscan SP2/SP2^XP, but much higher throughput, enabling increased sampling or a lower cost of ownership. The unpatterned wafer surface inspection tool also includes an integrated, high resolution SURFmonitor module that characterizes and measures surface quality, helping wafer manufacturers deliver substrates with superior surface quality and chipmakers measure surface roughness and detect subtle defects. While the Surfscan SP3 unpatterned wafer surface inspection tool is currently released for 300mm wafers, the Surfscan SP3 platform has been designed for extension to the next wafer size: 450mm.

• Powerful DUV source, DUV-optimized optics and algorithm improvements deliver sensitivity to defects as small as 26nm on prime wafers
• DUV-specific optical apertures enhance defect signal on films for a sensitivity improvement of up to 50% over the previous-generation Surfscan SP2/SP2^XP
• A new stage, image computer, and optics produce significant throughput enhancements compared to the Surfscan SP2/SP2^XP for fast defect sourcing and wafer dispositioning
• Integrated, high-resolution SURFmonitor enables characterization of surface quality, including measurement of surface roughness and capture of ultra-fine slip lines and scratches
• Full-wafer, calibrated, high resolution haze maps allow potential correlation to atomic force microscope (AFM) surface roughness measurements and other process parameters
• A brightfield differential interference contrast (DIC) optical mode enables detection and classification of critical defects such as Large Light Point Defects (LLPD)
• A backside inspection module (BSIM) provides detection of critical wafer backside defects that can cause yield-impacting defocus issues in the lithography cell
• Enhanced coordinate accuracy and optimized coordinate exchange with KLA-Tencor’s e-beam review tools improves defect redetection for better classification and sourcing
• Correlation of Surfscan SP3 to Surfscan SP2 and SP2^XP baselines enhances fleet flexibility
• Reliable, extendible architecture protects a fab’s capital investment

Applications

IC Manufacturing

Process Tool Monitoring: Within the IC fab, the Surfscan SP3 unpatterned wafer surface inspection system is used for qualification and monitoring of process tools for the 2Xnm design node. The Surfscan SP3 unpatterned wafer surface inspection system leverages its unique DUV wavelength, special apertures and multiple illumination and collection channels to address stringent 28nm node requirements for defect detection and classification on blanket films at production speeds. This allows engineers to monitor process tools for defects that may be introduced during film deposition, wet cleans or CMP. In addition, the integrated SURFmonitor allows monitoring of grain size and roughness of aluminum and poly films and enables detection of faint or shallow scratches at CMP.

Lithography: With its unique DUV sensitivity, the Surfscan SP3 unpatterned wafer surface inspection tool detects defocus, resist streak and other critical issues when serving as a lithography process tool monitor. In addition, the backside inspection module of the Surfscan SP3 unpatterned wafer surface inspection tool is used within the lithography cell to detect critical backside defects that can cause defocus issues on the front side of the wafer during patterning. The Surfscan SP3’s integrated SURFmonitor module also helps engineers qualify immersion scanners by detecting immersion-unique defects such as water marks.

Incoming Wafer Qualification: The DUV-sensitivity of the Surfscan SP3 unpatterned wafer surface inspection tool helps IC manufacturers ensure that incoming wafers meet their strict quality specifications.

Substrate Manufacturing

Inline Process Control: Defects that can form during wafer processing (i.e. polish marks, crystalline pits, terracing, voids) can affect the performance of IC devices. Identifying these defects early in the manufacturing process enables improved substrate quality and higher yield. The Surfscan SP3 unpatterned wafer surface inspection system has the sensitivity and throughput to reliability detect critical defects and surface quality issues inline, helping wafer manufacturers produce the top-grade substrates required for 2Xnm IC devices.

Final Wafer Qualification: The Surfscan SP3 unpatterned wafer surface inspection tool can be used by wafer manufacturers for final qualification of traditional and engineered substrates. While the high throughput of the Surfscan SP3 unpatterned wafer surface inspection tool provides increased productivity for final wafer check, the inspector’s high sensitivity ensures that the wafers meet IC manufacturers’ strict quality specifications.

Additional Products

Surfscan SP2XP: High throughput unpatterned wafer surface inspection system with UV illumination and Ultra-High Sensitivity mode for IC and substrate manufacturing at the 3Xnm design node. Surfscan SP2: Unpatterned wafer surface inspection system with UV darkfield technology providing 30nm sensitivity to support substrate qualification and process tool monitoring for the 90nm, 65nm and 45nm design nodes.

For more information, click on the Photo Gallery

For other unpatterned wafer defect inspection tools, please see K-T Certified.

• SURFmonitor Product Overview
• Surfscan SP2XP Product Overview
• Surfscan SP2 Product Overview

• 30nm: Beyond the Leading Edge of Defect Sensitivity
• High-Speed, Full-Wafer Microroughness
• Separating Crystal Defects from Particles

• Study of Relationship between 300 mm Si Wafer Surface and Annealing Temperatures (YMS, Issue 2, 2010
• Detection of Photo Resist Residue on Advanced Gate Layers (YMS, Issue 1, 2010)
• A Novel Method of Characterizing Post-laser Anneal Surface Conditions (YMS, Issue 1, 2008)
• A New Approach to Identifying Large, Yield-Impacting Defects on Polished Si Wafers (YMS, Summer 2007
• Enabling Manufacturing Productivity Improvement and Test Wafer Cost Reduction (YMS, Summer 2007)
• Unpatterned Wafer Inspection for Immersion Lithography Defectivity (YMS, Spring 2007)
• Generating High-Speed, Full-Wafer Maps of Surface Microroughness (YMS, Summer 2006)