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Lithography GlossaryWritten by Chris Mack A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z
Fab FE Matrix Feature Size Field, Exposure Example: An increase in the exposure field size allowed more die to be imaged per exposure, resulting in greater throughput. Field-By-Field Alignment Example: Although field-by-field alignment reduced throughput considerably, the improved overlay accuracy was worth the cost. Field Curvature Example: Field curvature results in a systematic focus error that can only be partially corrected by a wafer tilt adjustment. Flare Example: Contamination of the bottom surface of the lens resulted in a large increase in flare. Flood Exposure Example: A flood exposure is the last step in the image reversal process. Focal Plane Example: The best results typical come by placing the focal plane near the middle of the thickness of the resist. Focal Position Focus Example: The non-flatness of the wafer results in unavoidable focus errors. Focus-Exposure Matrix Example: The first step in measuring depth of focus is shooting a focus-exposure matrix. Fourier Optics Example: The Fourier Optics approach encourages a natural "frequency domain" language for the description of imaging. A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z
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