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SpectraFx 200
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Product Description

The SpectraFx 200, our seventh-generation thin-film measurement system, enables cost-effective control of IC manufacturers' advanced thin film processes. Based on our proven spectroscopic ellipsometry (SE) technology, the SpectraFx 200 thin film measurement system non-destructively delivers robust, highly accurate measurements of process variation on product wafers.

  • Optimized for 300mm fab-to-fab and tool-to-tool matching
  • Provides enhanced performance on ultra thin gate oxides, multi-stack and 193-nm anti-reflective coating (ARC) layers
  • 2D film stress option measures the entire wafer to generate a 2D wafer map

Applications

Shallow trench isolation (STI): SE technology enables complete solution for STI and robust pattern recognition for pre- and post-STI dielectric polish monitoring.

Lithography: 150 SE technology determines critical lithography measurements of photoresist and ARC (thickness and RI) for advanced resist development, layer characterization, and process control.

Etch: SE technology allows stable, precise measurements on poly gate, dielectric via, and trench etch.

Diffusion films: Complete diffusion solution with SWE, SE, and AccuFilm technologies for ultra thin gate oxides, gate ARC layers, ultra thin ONO, high k, silicon-on- insulator (SOI) substrates, and silicon germanium (SiGe) stacks.

Chemical vapor deposition (CVD): SE and DBS film measurement capabilities cover a wide range of film thicknesses with a single recipe for multi-layer ARC, hard mask stacks, and copper dual-damascene low-k stacks.

Chemical-mechanical planarization (CMP): Industry's smallest SE measurement area enables post-copper CMP dielectric stack measurements. Best-in-class robust pattern recognition and improved Auto Model Select (AMS) features benefit post-copper CMP and other high-end CMP processes. Film measurement capability on patterned metrology targets permits better CMP process control.

Metallization: SE technology also allows production-worthy measurement of ultra-thin physical vapor deposition (PVD), CVD, and atomic layer deposition (ALD) metal stacks with high optical extinction coefficients such as Co and Ni salicides, thin TI/TIN liner/barriers, copper barriers, CoWP, Ta, TaN/Ta, and TISIN.

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