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KLA-Tencor Helps Accelerate Advanced Mask Technology Development and Selection With New Option For PROLITH Lithography Optimization Tool
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Unique multi-algorithm architecture enables significantly faster, rigorous 3D EMF lithography simulations

SAN JOSE, Calif., Aug. 11, 2004--KLA-Tencor (NASDAQ: KLAC) today unveiled a new option for its market-leading PROLITH lithography optimization tool that will enable customers to better understand the lithographic effects of extreme resolution enhancement techniques (xRETs), such as embedded and alternating phase-shift masks (PSMs), and other advanced photomask features on IC yields. The new Mask Topography option is available with the latest release of PROLITH (version 8.1) and uses the industry's first multi-algorithm 3D electromagnetic field (EMF) simulation architecture to enable rigorous, highly accurate simulations that are dramatically faster than other commercial simulators. Using PROLITH v8.1, customers can achieve significant cost savings by avoidance of scrapped photomasks, reduction of engineering effort, and improved device yields. In addition to addressing advanced mask manufacturing requirements, PROLITH v8.1 delivers valuable insight into the potential of the most advanced lithography technologies available, including liquid immersion lithography with advanced polarization.

"To manufacture photomasks that meet our customers' needs for advanced IC production, Photronics must understand how our mask designs will perform under a wide variety of lithography conditions," stated Chris Progler, chief technology officer for Photronics. "Simulation serves as the critical link between the mask fabrication process and the lithography application. Moving forward, we expect even greater application of simulation tools to help drive down our development cost and improve cycle times."

Extending optical lithography to smaller design nodes requires that today's advanced masks incorporate multiple layers and xRETs, which drive up production costs. New solutions are needed that can quickly and accurately predict the lithographic effects of mask topography in order to select and optimize appropriate mask technologies, as well as determine the specification tolerances for masks when used in IC production. Traditional simulation tools, which use single-algorithm-based models, are difficult to set up and use, and can take several hours or days to complete a single simulation. With its unique multi-algorithm approach, the new Mask Topography option for PROLITH delivers this information in a fraction of the time--cutting lithography process development time by 50 to 90-plus percent. In addition, the option enables PROLITH to compare the results of different algorithms in order to evaluate modeling consistency--eliminating the need for customers to purchase two separate simulators.


"Many of the issues that affect the rate at which new chip designs make it into production are influenced or controlled by the lithography process," stated Chris Mack, vice president of lithography technology at KLA-Tencor. "With lithography consuming the largest share of the overall fab process budget, and mask costs and manufacturing complexity continuing to skyrocket, it is all the more critical that lithographers are able to optimize their lithography processes quickly and cost-effectively to make them production worthy and high yielding. PROLITH can help all of our customers across the lithography chain--from mask and resist vendors to lithography tool suppliers and chip manufacturers--achieve significant time and cost savings, while improving the quality of their processes."

PROLITH provides complete lithography process performance information in three dimensions, including aerial image formation, exposure, diffusion, and photoresist development. It can also determine the effects of using advanced stepper polarization capabilities--a key requirement for evaluating the performance gains enabled by liquid immersion lithography. PROLITH v8.1 includes a unique overlapping process window capability that simultaneously optimizes up to 33 critical device features at once with no additional simulation time--enabling dramatically faster decisions and increased engineering efficiency. With the new Mask Topography option, PROLITH can be employed to improve optical proximity correction (OPC) and PSM manufacturability, as well as address sub-wavelength distortions, such as corner rounding, line-end pullback and pitch biases, which can become major sources of yield loss.

PROLITH accuracy is supported by AutoTune, an option that automatically calibrates lithography models to virtually all types of data sets, including experimental CD or film thickness data, to match the specific lithography processes at each customer site. Another option, called Qckvu for PROLITH, enables users to quickly view a full-chip GDS-II or MEBES design file, and select a critical region for simulation.

KLA-Tencor will showcase PROLITH v8.1 and the new Mask Topography option at SPIE's 24th Annual BACUS Symposium on Photomask Technology, September 14-15, at booth #104 at the Monterey Convention Center, Monterey, Calif. The technology will also be highlighted at KLA-Tencor's annual PROLITH Technical Forum, to be held on September 14 at the Monterey Conference Center, Colton Rooms I and II.


About KLA-Tencor: KLA-Tencor is the world leader in yield management and process control solutions for semiconductor manufacturing and related industries. Headquartered in San Jose, Calif., with operations around the world, KLA-Tencor ranked #6 on S&P's 2002 index of the top 500 companies in the U.S. KLA-Tencor is traded on the Nasdaq National Market under the symbol KLAC. Additional information about the company is available on the Internet at http://www.kla-tencor.com

Contact:
Meggan Powers
Director Corporate Communications

 

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